 |
|
List Archives > 
Mathcad List Archive > 
Archive by date > 
This Month By Date > 
This Month By Topic
[mathcad] Short gate MESFET model
| [mathcad] Short gate MESFET model |
|
Author: Richard Balmer
Posted: Fri, 6 Jun 2008 15:00:34 +0100
|
Hi,
I have implemented a Mathcad worksheet to model a long channel MESFET
based on formulae in Sze (basically the same formulae as a JFET).
I would like to model a short channel MESFET where velocity saturation
comes into play, but am having difficulty generating a coherent transistor
output characteristic (the current at the transition between active and
saturation regions doesn't match).
In the active part of the characteristic, the current is mobility
dependent (and Vds, Vgs). In the saturation part of the characteristic,
the current is saturation velocity dependent (and Vgs), but the voltage
drop along the channel is unknown. I am using the Mathcad 'Find' function
to solve 2 equations with 2 unknowns, Ids and p.
Is anyone familiar with this problem?
Many thanks if you can help.
Richard Balmer
Dr Richard Balmer
Element Six Ltd.
Reception: +44 1344 638200
Direct Line: +44 1344 638220
************************************************************************
<
< Privileged, confidential and/or copyright information may be contained
< in this e-mail. This e-mail is for the use only of the intended addressee.
< If you are not the intended addressee, or the person responsible for
< delivering it to the intended addressee, you may not copy, forward,
< disclose or otherwise use it or any part of it in any way whatsoever.
< To do so is prohibited and may be unlawful. If you receive this e-mail
< by mistake please advise the sender immediately by using the reply
< facility in your e-mail software.
<
< Element Six may monitor the content of e-mails sent
< and received via its network for the purposes of ensuring compliance
< with its policies and procedures.
<
< This footnote also confirms that this email message has been swept
< for the presence of computer viruses.
<
< ************************************************************************
---
The Mathcad List - Discussion, Support & News
Contributions: />
Hosted by: Adept Scientific http://www.adeptscience.com
List Archive: http://lists.adeptscience.co.uk/
---
Would you like this to come to a different email address?
---
Simply leave the mailing list (see below) and re-join by
sending a blank email from the new address to:
or
---
You are currently subscribed to mathcad as: />
To unsubscribe send a blank email to |
| Re: [mathcad] Short gate MESFET model |
|
Author: Eden Mei
Posted: Fri, 6 Jun 2008 12:12:04 -0700
|
Posting the sheet would be useful
TTFN
----- Original Message -----
From:
To:
Sent: Friday, June 06, 2008 7:00 AM
Subject: [mathcad] Short gate MESFET model
Hi,
I have implemented a Mathcad worksheet to model a long channel MESFET based on formulae in Sze (basically the same formulae as a JFET).
I would like to model a short channel MESFET where velocity saturation comes into play, but am having difficulty generating a coherent transistor output characteristic (the current at the transition between active and saturation regions doesn't match).
In the active part of the characteristic, the current is mobility dependent (and Vds, Vgs). In the saturation part of the characteristic, the current is saturation velocity dependent (and Vgs), but the voltage drop along the channel is unknown. I am using the Mathcad 'Find' function to solve 2 equations with 2 unknowns, Ids and p.
Is anyone familiar with this problem?
Many thanks if you can help.
Richard Balmer
Dr Richard Balmer
Element Six Ltd.
Reception: +44 1344 638200
Direct Line: +44 1344 638220
************************************************************************
< Privileged, confidential and/or copyright information may be contained
< in this e-mail. This e-mail is for the use only of the intended addressee.
< If you are not the intended addressee, or the person responsible for
< delivering it to the intended addressee, you may not copy, forward,
< disclose or otherwise use it or any part of it in any way whatsoever.
< To do so is prohibited and may be unlawful. If you receive this e-mail
< by mistake please advise the sender immediately by using the reply
< facility in your e-mail software.
<
< Element Six may monitor the content of e-mails sent
< and received via its network for the purposes of ensuring compliance
< with its policies and procedures.
<
< This footnote also confirms that this email message has been swept
< for the presence of computer viruses.
<
< ************************************************************************
--- The Mathcad List - Discussion, Support & News Contributions: Hosted by: Adept Scientific http://www.adeptscience.com List Archive: http://lists.adeptscience.co.uk/ --- Would you like this to come to a different email address? --- Simply leave the mailing list (see below) and re-join by sending a blank email from the new address to: or --- You are currently subscribed to mathcad as: To unsubscribe send a blank email to />
---
The Mathcad List - Discussion, Support & News
Contributions: />
Hosted by: Adept Scientific http://www.adeptscience.com
List Archive: http://lists.adeptscience.co.uk/
---
Would you like this to come to a different email address?
---
Simply leave the mailing list (see below) and re-join by
sending a blank email from the new address to:
or
---
You are currently subscribed to mathcad as: />
To unsubscribe send a blank email to |
| RE: [mathcad] Short gate MESFET model |
|
Author: Stuart Bruff
Posted: Mon, 9 Jun 2008 01:20:11 +0100
|
I'm not familar with the subject area, but if you could post a worksheet
someone might be able to give some advice.
Stuart
-----Original Message-----
From:
Sent: 06 June 2008 3:01 PM
To: />
Subject: [mathcad] Short gate MESFET model
Hi,
I have implemented a Mathcad worksheet to model a long channel MESFET based
on formulae in Sze (basically the same formulae as a JFET).
I would like to model a short channel MESFET where velocity saturation comes
into play, but am having difficulty generating a coherent transistor output
characteristic (the current at the transition between active and saturation
regions doesn't match).
In the active part of the characteristic, the current is mobility dependent
(and Vds, Vgs). In the saturation part of the characteristic, the current is
saturation velocity dependent (and Vgs), but the voltage drop along the
channel is unknown. I am using the Mathcad 'Find' function to solve 2
equations with 2 unknowns, Ids and p.
Is anyone familiar with this problem?
Many thanks if you can help.
Richard Balmer
Dr Richard Balmer
Element Six Ltd.
Reception: +44 1344 638200
Direct Line: +44 1344 638220
************************************************************************
< Privileged, confidential and/or copyright information may be contained
< in this e-mail. This e-mail is for the use only of the intended
addressee.
< If you are not the intended addressee, or the person responsible for
< delivering it to the intended addressee, you may not copy, forward,
< disclose or otherwise use it or any part of it in any way whatsoever.
< To do so is prohibited and may be unlawful. If you receive this e-mail
< by mistake please advise the sender immediately by using the reply
< facility in your e-mail software.
<
< Element Six may monitor the content of e-mails sent
< and received via its network for the purposes of ensuring compliance
< with its policies and procedures.
<
< This footnote also confirms that this email message has been swept
< for the presence of computer viruses.
<
< ************************************************************************
--- The Mathcad List - Discussion, Support & News Contributions:
Hosted by: Adept Scientific
http://www.adeptscience.com List Archive: http://lists.adeptscience.co.uk/
--- Would you like this to come to a different email address? --- Simply
leave the mailing list (see below) and re-join by sending a blank email from
the new address to: or --- You
are currently subscribed to mathcad as: To
unsubscribe send a blank email to
/>
---
The Mathcad List - Discussion, Support & News
Contributions: />
Hosted by: Adept Scientific http://www.adeptscience.com
List Archive: http://lists.adeptscience.co.uk/
---
Would you like this to come to a different email address?
---
Simply leave the mailing list (see below) and re-join by
sending a blank email from the new address to:
or
---
You are currently subscribed to mathcad as: />
To unsubscribe send a blank email to |
| RE: [mathcad] Short gate MESFET model |
|
Author: Richard Balmer
Posted: Mon, 9 Jun 2008 13:54:15 +0100
|
You're right, sorry, should have posted this before.
Richard Balmer
"Stuart Bruff"
09/06/2008 01:20
Please respond to
/>
To
/>
cc
bcc
Fax to
Subject
RE: [mathcad] Short gate MESFET model
I'm not familar with the subject area, but if you could post a worksheet
someone might be able to give some advice.
Stuart
-----Original Message-----
From:
Sent: 06 June 2008 3:01 PM
To: />
Subject: [mathcad] Short gate MESFET model
Hi,
I have implemented a Mathcad worksheet to model a long channel MESFET
based on formulae in Sze (basically the same formulae as a JFET).
I would like to model a short channel MESFET where velocity saturation
comes into play, but am having difficulty generating a coherent transistor
output characteristic (the current at the transition between active and
saturation regions doesn't match).
In the active part of the characteristic, the current is mobility
dependent (and Vds, Vgs). In the saturation part of the characteristic,
the current is saturation velocity dependent (and Vgs), but the voltage
drop along the channel is unknown. I am using the Mathcad 'Find' function
to solve 2 equations with 2 unknowns, Ids and p.
Is anyone familiar with this problem?
Many thanks if you can help.
Richard Balmer
Dr Richard Balmer
Element Six Ltd.
Reception: +44 1344 638200
Direct Line: +44 1344 638220
************************************************************************
< Privileged, confidential and/or copyright information may be contained
< in this e-mail. This e-mail is for the use only of the intended
addressee.
< If you are not the intended addressee, or the person responsible for
< delivering it to the intended addressee, you may not copy, forward,
< disclose or otherwise use it or any part of it in any way whatsoever.
< To do so is prohibited and may be unlawful. If you receive this e-mail
< by mistake please advise the sender immediately by using the reply
< facility in your e-mail software.
<
< Element Six may monitor the content of e-mails sent
< and received via its network for the purposes of ensuring compliance
< with its policies and procedures.
<
< This footnote also confirms that this email message has been swept
< for the presence of computer viruses.
<
< ************************************************************************
--- The Mathcad List - Discussion, Support & News Contributions:
Hosted by: Adept Scientific
http://www.adeptscience.com List Archive: http://lists.adeptscience.co.uk/
--- Would you like this to come to a different email address? --- Simply
leave the mailing list (see below) and re-join by sending a blank email
from the new address to: or ---
You are currently subscribed to mathcad as: To
unsubscribe send a blank email to
/>
---
The Mathcad List - Discussion, Support & News
Contributions:
Hosted by: Adept Scientific http://www.adeptscience.com
List Archive: http://lists.adeptscience.co.uk/
---
Would you like this to come to a different email address?
---
Simply leave the mailing list (see below) and re-join by
sending a blank email from the new address to:
or
---
You are currently subscribed to mathcad as:
To unsubscribe send a blank email to
************************************************************************
<
< Privileged, confidential and/or copyright information may be contained
< in this e-mail. This e-mail is for the use only of the intended addressee.
< If you are not the intended addressee, or the person responsible for
< delivering it to the intended addressee, you may not copy, forward,
< disclose or otherwise use it or any part of it in any way whatsoever.
< To do so is prohibited and may be unlawful. If you receive this e-mail
< by mistake please advise the sender immediately by using the reply
< facility in your e-mail software.
<
< Element Six may monitor the content of e-mails sent
< and received via its network for the purposes of ensuring compliance
< with its policies and procedures.
<
< This footnote also confirms that this email message has been swept
< for the presence of computer viruses.
<
< ************************************************************************
---
The Mathcad List - Discussion, Support & News
Contributions: />
Hosted by: Adept Scientific http://www.adeptscience.com
List Archive: http://lists.adeptscience.co.uk/
---
Would you like this to come to a different email address?
---
Simply leave the mailing list (see below) and re-join by
sending a blank email from the new address to:
or
---
You are currently subscribed to mathcad as: />
To unsubscribe send a blank email to |
|
Attachments:
GaAs MESFET v3.xmcdz
|
Previous by date: RE: [mathcad] naming convention, Pergande, Albert N
Next by date: RE: [mathcad] naming convention, Jean L J Rosenfeld
Previous thread: [mathcad] Phase and Frequency modulation, Lazarus, Max
Next thread: [mathcad] naming convention, Marc Artzrouni
|
|
|